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| Preliminary Specifications GaAs MMIC Power Amplifier 2 - 6 GHz Features q q q q q q MAAM26100-P1 V1.A CR-15 -C.085 +30 dBm Saturated Output Power 18 dB Typical Gain 30% Power Added Efficiency On-Chip Bias Network DC Decoupled RF Input and Output High Performance Ceramic Bolt Down Package .70 .530 4X .06 X 45 CHAMFER 10X .050 MIN 10 9 8 76 .159 -B- .328 .010 .318 .010 Description M/A-COM's MAAM26100-P1 is a GaAs MMIC two stage high efficiency power amplifier in a high performance bolt down ceramic package. The MAAM26100-P1 is a fully monolithic design for operation in 50-ohm systems, with an on-chip negative bias network which eliminates the need for external bias circuitry. The MAAM26100-P1 is ideally suited for driver amplifiers and transmitter outputs in Electronic Warfare Jammers, Missile Subsystems and Phased Array Radars. M/A-COM's MAAM26100-P1 is fabricated using a mature 0.5-micron gate length GaAs process. The process features full passivation for increased performance reliability. 2X .010 SQ. ORIENTATION TAB .115 .010 4X .050 .33 O .096 THRU 12 3 45 10X .010 .003 4X .100 O .004 M A B C .005 .002 -A.020 CERAMIC .040 BASE PLATE .090 MAX Notes: (unless otherwise specified) 1. Dimensions are inches. 2. Tolerance: in .xxx = .010 Ordering Information Part Number MAAM26100-P1 Package Ceramic Bolt Down Typical Electrical Specifications, TA = +25C , VDD = +8 V, VGG = -5 V Parameter Small Signal Gain Input VSWR Output VSWR Output Power Power Added Efficiency Output IP3 Test Conditions PIN -10 dBm PIN -10 dBm PIN -10 dBm PIN = +15 dBm PIN = +15 dBm 2 - 6 GHz 2 - 6 GHz 2 - 6 GHz 2 - 6 GHz 2 - 6 GHz 2, 5 & 6 GHz dBm % dBm Units dB Min. Typ. 18 2.0:1 2.2:1 +30 30 40 Max. The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. M/A-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 s 1 Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 s Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 GaAs MMIC Power Amplifier MAAM 26100-P1 V1.A Absolute Maximum Ratings1, 2 Parameter VDD VGG Power Dissipation RF Input Power Channel Temperature Storage Temperature Thermal Resistance (Channel to Case) Functional Diagram3,4 VDD 0.01uF 10 IN 3 6 VGG GND 1,2,4,5,7,9 3. Nominal bias is obtained by first connecting -5 volts to pin 6 (VGG),followed by connecting +9 volts to pin 10 (VDD). Note sequence. 4. RF ground and thermal interface is the flange (case bottom). Adequate heat sinking is required. Absolute Maximum 10 Volts -10 Volts 8.4 W +23 dBm 150C -65C to +150C 15C/W MAAM26100-P1 OUT 8 1. Exceeding these limits may cause permanent damage. 2. Case Temperature (Tc) = +25C Typical Performance @+25C GAIN vs FREQUENCY 22 20 2.0 VSWR vs FREQUENCY Linear 1.8 S21 (dB) VSWR 18 16 14 12 10 2.0 2.5 3.0 3.5 4.0 at PIN = +15dBm 1.6 1.4 1.2 S22 S11 1.0 4.5 5.0 5.5 6.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) FREQUENCY (GHz) OUTPUT POWER vs FREQUENCY @ PIN = +15 dBm 35 35 30 30 25 20 15 10 2.0 3.0 4.0 5.0 6.0 POWER ADDED EFFICIENCY vs FREQUENCY @ PIN = +15 dBm POUT (dBm) PAE (%) 25 20 15 10 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 FREQUENCY (GHz) FREQUENCY (GHz) The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction. 2 North America: Tel. (800) 366-2266 Fax (800) 618-8883 s M/A-COM, Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 s Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 |
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